Discrete Semiconductor Products

BCR185SE6327BTSA1

Obsolete

TRANS 2PNP PREBIAS 0.25W SOT363

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS 2PNP PREBIAS 0.25W SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BCR185SE6327BTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-VSSOP
Power - Max [Max]	250 mW
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	PG-SOT363-PO
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Package / Case	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) [Max]
INFINEON BCR185SE6327BTSA1	200 MHz	300 mV	250 mW	100 mA	PG-SOT363-PO	70	2 PNP - Pre-Biased (Dual)	Surface Mount	6-VSSOP SC-88 SOT-363	47 kOhms	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT363-PO

Technical documentation and resources

No documents available