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SIDC14D60E6X1SA1
Discrete Semiconductor Products

SIDC14D60E6X1SA1

Obsolete
INFINEON

DIODE GP 600V 30A WAFER

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SIDC14D60E6X1SA1
Discrete Semiconductor Products

SIDC14D60E6X1SA1

Obsolete
INFINEON

DIODE GP 600V 30A WAFER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSIDC14D60E6X1SA1
Current - Average Rectified (Io)30 A
Current - Reverse Leakage @ Vr27 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDie
Speed [Min]200 mA, 500 ns
Supplier Device PackageSawn on foil
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If [Max]1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

SIDC14D60 Series

Diode 600 V 30A Surface Mount Sawn on foil

Documents

Technical documentation and resources

No documents available