Specification	1SS372(TE85L,F)

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SOT-323, SC-70
Speed	200 mA
Speed	Any Speed
Supplier Device Package	USM
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	10 V
Voltage - Forward (Vf) (Max) @ If [Max]	500 mV

1SS372 Series

Diodes, 10 V/0.1 A Schottky Barrier Diode, SOT-323(USM)

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Capacitance @ Vr, F	Technology	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]
Toshiba Semiconductor and Storage 1SS372(TE85L,F)	500 mV	Surface Mount	100 mA	SC-70 SOT-323	20 µA	USM	20 pF	Schottky	200 mA	Any Speed	10 V	125 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7435	$ 0.28

General part information

Diodes, 10 V/0.1 A Schottky Barrier Diode, SOT-323(USM)

Technical documentation and resources