Discrete Semiconductor Products

IPP075N15N3GXKSA1

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INFINEON

POWER MOSFET, N CHANNEL, 150 V, 100 A, 0.0062 OHM, TO-220, THROUGH HOLE

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Discrete Semiconductor Products

IPP075N15N3GXKSA1

Active

INFINEON

POWER MOSFET, N CHANNEL, 150 V, 100 A, 0.0062 OHM, TO-220, THROUGH HOLE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP075N15N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5470 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP075 Series

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Mounting Type	Technology
INFINEON IPP075N15N3GXKSA1	150 V	20 V	100 A	93 nC	N-Channel	175 °C	-55 °C	PG-TO220-3	7.5 mOhm	4 V	5470 pF	8 V 10 V	TO-220-3	300 W	Through Hole	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1029	$ 3.88
	Tube	1	$ 5.29
		10	$ 3.53
		100	$ 2.52
		500	$ 2.10
		1000	$ 2.04
Newark	Each	1	$ 4.02
		10	$ 3.04
		25	$ 2.05
		50	$ 2.05
		100	$ 2.05
		250	$ 2.04
		500	$ 2.04

Description

General part information

IPP075 Series

The IPP075N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.

Documents

Technical documentation and resources