Specification	SSM6P39TU,LF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	213 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6P39TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -1.5 A, 0.213 Ω@4V, SOT-363F(UF6)

Part	Configuration	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power - Max [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature	FET Feature	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6P39TU,LF	2 P-Channel (Dual)	1.5 A	UF6	500 mW	20 V	213 mOhm	150 °C	1.8 V	Logic Level Gate	6.4 nC	6-SMD Flat Leads	MOSFET (Metal Oxide)	Surface Mount	1 V	250 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	8555	$ 0.60

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -1.5 A, 0.213 Ω@4V, SOT-363F(UF6)

Technical documentation and resources