Discrete Semiconductor Products

SKP02N60XKSA1

Obsolete

TRANS IGBT CHIP N-CH 600V 6A 30W 3-PIN(3+TAB) TO-220AB TUBE

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Discrete Semiconductor Products

Obsolete

TRANS IGBT CHIP N-CH 600V 6A 30W 3-PIN(3+TAB) TO-220AB TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	SKP02N60XKSA1

Current - Collector Pulsed (Icm)	12 A
Gate Charge	14 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	30 W
Reverse Recovery Time (trr)	130 ns
Supplier Device Package	PG-TO220-3-1
Switching Energy	64 µJ
Td (on/off) @ 25°C [custom]	259 ns
Td (on/off) @ 25°C [custom]	20 ns
Test Condition	400 V, 118 Ohm, 2 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Switching Energy	Package / Case	Mounting Type	Power - Max [Max]	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C
INFINEON SKP02N60XKSA1	259 ns	20 ns	NPT	150 °C	-55 °C	14 nC	PG-TO220-3-1	2.4 V	12 A	130 ns	64 µJ	TO-220-3	Through Hole	30 W	2 A 15 V 118 Ohm 400 V	600 V
INFINEON SKP02N120XKSA1			NPT	150 °C	-55 °C	11 nC	PG-TO220-3-1	3.6 V	9.6 A	50 ns	220 µJ	TO-220-3	Through Hole	62 W	2 A 15 V 91 Ohm 800 V	1200 V	23 ns 260 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT NPT 600 V 6 A 30 W Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available