Specification	TTA0002(Q)

Current - Collector (Ic) (Max) [Max]	18 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	180 W
Supplier Device Package	TO-3P(L)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	160 V

TTA0002 Series

Bipolar Transistors, PNP Bipolar Transistor, -160 V, -18 A, TO-3P(L)

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Operating Temperature	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type
Toshiba Semiconductor and Storage TTA0002(Q)	80	Through Hole	150 °C	30 MHz	TO-3PL	160 V	180 W	1 µA	2 V	TO-3P(L)	18 A	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.31

General part information

Bipolar Transistors, PNP Bipolar Transistor, -160 V, -18 A, TO-3P(L)

Technical documentation and resources