Specification	SSM6P15FU,LF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	9.1 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.7 V

SSM6P15FU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-363(US6)

Part	Configuration	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Package / Case	Mounting Type	Supplier Device Package
Toshiba Semiconductor and Storage SSM6P15FU,LF	2 P-Channel (Dual)	12 Ohm	150 °C	100 mA	30 V	200 mW	9.1 pF	1.7 V	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	Surface Mount	US6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	49716	$ 0.33

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-363(US6)

Technical documentation and resources