Discrete Semiconductor Products

SUM75N15-18P-E3

Obsolete

MOSFET N-CH 150V 75A TO263

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 75A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM75N15-18P-E3

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	100 nC
Input Capacitance (Ciss) (Max)	4180 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	312.5 W, 3.12 W
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

Part	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package Name	Gate Charge (Max)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Package / Case	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Power Dissipation (Max)
Vishay Dale SUM75N06-09L-E3	2400 pF	90 A	3 V	TO-263 (D2PAK)	75 nC	N-Channel	Surface Mount	60 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	9.3 mOhm
Vishay Dale SUM75N15-18P-E3	4180 pF	75 A	4.5 V	TO-263 (D2PAK)	100 nC	N-Channel	Surface Mount	150 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18 mOhm	10 V	-55 °C	150 °C	20 V	3.12 W 312.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 150 V 75A (Tc) 3.12W (Ta), 312.5W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available