Discrete Semiconductor Products

IRGS6B60KPBF

Obsolete

IGBT, 13A I(C), 600V V(BR)CES, N

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT, 13A I(C), 600V V(BR)CES, N

Technical Specifications

Parameters and characteristics for this part

Specification	IRGS6B60KPBF

Current - Collector Pulsed (Icm)	26 A
Gate Charge	18.2 nC
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]	90 W
Supplier Device Package	D2PAK
Switching Energy	110 µJ, 135 µJ
Td (on/off) @ 25°C [Max]	215 ns
Td (on/off) @ 25°C [Min]	25 ns
Test Condition	5 A, 100 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Current - Collector Pulsed (Icm)	Package / Case	Power - Max [Max]	Test Condition	Mounting Type	Supplier Device Package	Gate Charge	Switching Energy	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type
INFINEON IRGS6B60KPBF	600 V	25 ns	215 ns	26 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	90 W	5 A 15 V 100 Ohm 400 V	Surface Mount	PG-TO263-3-901	18.2 nC	110 µJ 135 µJ	2.2 V	150 °C	-55 °C
INFINEON IRGS6B60KPBF	600 V	25 ns	215 ns	26 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	90 W	5 A 15 V 100 Ohm 400 V	Surface Mount	D2PAK	18.2 nC	110 µJ 135 µJ	2.2 V	150 °C	-55 °C	NPT

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General part information

IGBT 600 V 13 A 90 W Surface Mount PG-TO263-3-901

Technical documentation and resources

No documents available