Discrete Semiconductor Products

IPI50N12S3L15AKSA1

Obsolete

MOSFET N-CHANNEL_100+

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CHANNEL_100+

Technical Specifications

Parameters and characteristics for this part

Specification	IPI50N12S3L15AKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	100 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Grade	Package / Case	Current - Continuous Drain (Id) @ 25°C	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	FET Type	Technology
INFINEON IPI50N12S3L15AKSA1	4.5 V 10 V	2.4 V	57 nC	15.7 mOhm	100 W	120 V	Through Hole	Automotive	I2PAK TO-262-3 Long Leads TO-262AA	50 A	AEC-Q101	175 °C	-55 °C	4180 pF	20 V	N-Channel	MOSFET (Metal Oxide)

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General part information

N-Channel 120 V 50A (Tc) 100W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources