Discrete Semiconductor Products
IRF1018EPBF
ActiveINFINEON
IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 8.4 MOHM;
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Discrete Semiconductor Products
IRF1018EPBF
ActiveINFINEON
IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 8.4 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF1018EPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 79 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2290 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 110 W |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1898 | $ 1.56 | |
| Tube | 1 | $ 1.22 | ||
| 10 | $ 1.00 | |||
| 100 | $ 0.78 | |||
| 500 | $ 0.66 | |||
| 1000 | $ 0.54 | |||
| 2000 | $ 0.50 | |||
| 5000 | $ 0.48 | |||
| 10000 | $ 0.46 | |||
Description
General part information
IRF1018 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .
