Discrete Semiconductor Products
IPP65R095C7XKSA1
ActiveINFINEON
COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 95 MOHM; HIGHEST PERFORMANCE
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Discrete Semiconductor Products
IPP65R095C7XKSA1
ActiveINFINEON
COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 95 MOHM; HIGHEST PERFORMANCE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP65R095C7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2140 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 128 W |
| Rds On (Max) @ Id, Vgs | 95 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 5.16 | |
| Tube | 1 | $ 6.01 | ||
| 10 | $ 4.03 | |||
| 100 | $ 2.91 | |||
| 500 | $ 2.43 | |||
| 1000 | $ 2.42 | |||
Description
General part information
IPP65R095 Series
650V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages and PWM stages for e.g. computing, server, telecom, UPS and solar.
Documents
Technical documentation and resources