Discrete Semiconductor Products

IPA80R650CEXKSA2

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MOSFET N-CH 800V 8A TO220-3F

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Discrete Semiconductor Products

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MOSFET N-CH 800V 8A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	IPA80R650CEXKSA2

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	33 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	TO-220-3F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPA80R650CEXKSA2	N-Channel	3.9 V	20 V	45 nC	TO-220-3 Full Pack	TO-220-3F	MOSFET (Metal Oxide)	10 V	Through Hole	8 A	33 W	650 mOhm	-40 °C	150 °C	800 V	1100 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 8A (Ta) 33W (Tc) Through Hole TO-220-3F

Technical documentation and resources