Discrete Semiconductor Products

SDT08S60

Obsolete

DIODE SIL CARB 600V 8A PGTO2202

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 600V 8A PGTO2202

Technical Specifications

Parameters and characteristics for this part

Specification	SDT08S60

Capacitance @ Vr, F	280 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	300 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Reverse Recovery Time (trr)	Supplier Device Package
INFINEON SDT08S60	Through Hole	TO-220-2	175 ░C	-55 °C	500 mA	280 pF	8 A	300 µA	1.7 V	600 V	SiC (Silicon Carbide) Schottky	0 ns	PG-TO220-2-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Through Hole PG-TO220-2-2

Technical documentation and resources