Specification	SSM6K504NU,LF

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	19.5 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SSM6K504NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 9.0 A, 0.0195 Ω@10V, SOT-1220(UDFN6B)

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6K504NU,LF	4.8 nC	620 pF	N-Channel	MOSFET (Metal Oxide)	19.5 mOhm	Surface Mount	4.5 V 10 V	9 A	150 °C	30 V	20 V	1.25 W	6-UDFNB (2x2)	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2903	$ 0.37

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 9.0 A, 0.0195 Ω@10V, SOT-1220(UDFN6B)

Technical documentation and resources