Discrete Semiconductor Products

LQA10T300

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DIODE GEN PURP 300V 10A TO220AC

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Discrete Semiconductor Products

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DIODE GEN PURP 300V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	LQA10T300

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	12.6 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.9 V

Part	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Diode Configuration	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If
POWER INTEGRATIONS LQA10N200C	13.9 ns	250 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	Surface Mount	-55 °C	150 °C	1 Pair Common Cathode	1.1 V	200 mA 500 ns	5 A	200 V	Standard
POWER INTEGRATIONS LQA10T300	12.6 ns	25 µA	TO-220-2	TO-220AC	Through Hole		150 °C			200 mA 500 ns		300 V	Standard	10 A	1.9 V
POWER INTEGRATIONS LQA10N150C	15.1 ns	250 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	Surface Mount	-55 °C	150 °C	1 Pair Common Cathode	1.1 V	200 mA 500 ns	5 A		Standard

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General part information

Diode 300 V 10A Through Hole TO-220AC

Technical documentation and resources