Discrete Semiconductor Products
IPB083N10N3GATMA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 8.3 MOHM;
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Discrete Semiconductor Products
IPB083N10N3GATMA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 8.3 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB083N10N3GATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 55 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3980 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs [Max] | 8.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB083 Series
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).
Documents
Technical documentation and resources
