Zenode.ai Logo
Beta
SOT1289B
Discrete Semiconductor Products

PNE20080EPE-QZ

Active
Nexperia USA Inc.

200 V, 8 A HYPERFAST RECOVERY RECTIFIER

SOT1289B
Discrete Semiconductor Products

PNE20080EPE-QZ

Active
Nexperia USA Inc.

200 V, 8 A HYPERFAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationPNE20080EPE-QZ
Capacitance @ Vr, F86 pF
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr1 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction175 °C
Package / CaseTO-277, 3-PowerDFN
QualificationAEC-Q101
Reverse Recovery Time (trr)30 ns
Speed500 ns, 200 mA
Supplier Device PackageCFP15B
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.30

Description

General part information

PNE20080EPE-Q Series

High power density, hyperfast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package.