Discrete Semiconductor Products

IPI030N10N3GHKSA1

Obsolete

MOSFET N-CH 100V 100A TO262-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 100A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI030N10N3GHKSA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	206 nC
Input Capacitance (Ciss) (Max) @ Vds	14800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)
INFINEON IPI030N10N3GHKSA1	100 A	175 °C	-55 °C	Through Hole	6 V 10 V	14800 pF	PG-TO262-3	3.5 V	N-Channel	3 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	100 V	300 W	MOSFET (Metal Oxide)	206 nC	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3

Technical documentation and resources