Discrete Semiconductor Products

SQD40020EL_GE3

LTB

MOSFET N-CH 40V 100A TO252AA

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Discrete Semiconductor Products

LTB

MOSFET N-CH 40V 100A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SQD40020EL_GE3

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	165 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	8800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	107 W
Qualification	AEC-Q101
Rds On (Max)	2.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

Part	Vgs(th) (Max)	Rds On (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Package Name	Package / Case	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Grade	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SQD40020E_GE3	3.5 V	2.33 mOhm	107 W	40 V	N-Channel	Surface Mount	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	-55 °C	175 °C	130 nC	Automotive	8000 pF	10 V	MOSFET (Metal Oxide)	100 A	20 V
Vishay Dale SQD40020EL_GE3	2.2 V	2.2 mOhm	107 W	40 V	N-Channel	Surface Mount	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	-55 °C	175 °C	165 nC	Automotive	8800 pF		MOSFET (Metal Oxide)	100 A	20 V	10 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 40 V 100A (Tc) 107W (Tc) Surface Mount TO-252AA

Technical documentation and resources