Discrete Semiconductor Products

BSC072N03LDGATMA1

Obsolete

MOSFET 2N-CH 30V 11.5A 8TDSON

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 11.5A 8TDSON

Technical Specifications

Parameters and characteristics for this part

Specification	BSC072N03LDGATMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	41 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	57 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	PG-TDSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Part	Configuration	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Power - Max [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Feature	Drain to Source Voltage (Vdss)
INFINEON BSC072N03LDGATMA1	2 N-Channel (Dual)	11.5 A	Surface Mount	150 °C	-55 °C	MOSFET (Metal Oxide)	57 W	8-PowerVDFN	41 nC	PG-TDSON-8-4	7.2 mOhm	3500 pF	2.2 V	Logic Level Gate	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 11.5A 57W Surface Mount PG-TDSON-8-4

Technical documentation and resources