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SOT23
Discrete Semiconductor Products

PBHV9115T-QR

Active
Nexperia USA Inc.

150 V, 1 A PNP HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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Search across all available documentation for this part.

DocumentsQuestions about package outline drawingsplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body+9
SOT23
Discrete Semiconductor Products

PBHV9115T-QR

Active
Nexperia USA Inc.

150 V, 1 A PNP HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Deep-Dive with AI

DocumentsQuestions about package outline drawingsplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body+9

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV9115T-QR
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition115 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]150 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.17

Description

General part information

PBHV9115T-Q Series

PNP high-voltage low VCEsattransistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T-Q.