Zenode.ai Logo
Beta
IFEINFAIGW50N65F5XKSA1
Discrete Semiconductor Products

IRG8P60N120KD-EPBF

Obsolete
INFINEON

IRG8P60N120 - DISCRETE IGBT WITH

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
IFEINFAIGW50N65F5XKSA1
Discrete Semiconductor Products

IRG8P60N120KD-EPBF

Obsolete
INFINEON

IRG8P60N120 - DISCRETE IGBT WITH

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRG8P60N120KD-EPBF
Current - Collector (Ic) (Max) [Max]100 A
Current - Collector Pulsed (Icm)120 A
Gate Charge345 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-3
Power - Max [Max]420 W
Reverse Recovery Time (trr)210 ns
Supplier Device PackageTO-247AD
Switching Energy2.3 mJ, 2.8 mJ
Td (on/off) @ 25°C240 ns, 40 ns
Test Condition15 V, 600 V, 40 A, 5 Ohm
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 41$ 7.48
41$ 7.48
N/A 0$ 0.00
0$ 0.00
8826$ 8.50
8826$ 8.50

Description

General part information

IRG8P Series

IGBT 1200 V 100 A 420 W Through Hole TO-247AD

Documents

Technical documentation and resources