Specification	CVJ10F30,LF

Current - Average Rectified (Io) (per Diode)	1 A
Current - Reverse Leakage @ Vr	50 µA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	6-SMD (5 Leads), Flat Leads
Speed	500 ns, 200 mA
Supplier Device Package	UFV
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	570 mV

CVJ10F30 Series

Diodes, 30 V/1 A Schottky Barrier Diode, SOT-353F(UFV)

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Supplier Device Package	Speed	Technology	Diode Configuration	Mounting Type	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Package / Case
Toshiba Semiconductor and Storage CVJ10F30,LF	30 V	570 mV	125 °C	UFV	200 mA 500 ns	Schottky	2 Independent	Surface Mount	1 A	50 µA	6-SMD (5 Leads) Flat Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	3000	$ 0.27
Digikey	N/A	6513	$ 0.28

General part information

Diodes, 30 V/1 A Schottky Barrier Diode, SOT-353F(UFV)

Technical documentation and resources