Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CY62187EV30LL-55BAXI |
|---|---|
| Access Time | 55 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 4M x 16 |
| Memory Size | 8 MB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 48-LFBGA |
| Supplier Device Package | 48-FBGA (8x9.5) |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.7 V |
| Voltage - Supply [Min] | 2.2 V |
| Write Cycle Time - Word, Page | 55 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
CY62187EV30LL Series
CY62187EV30LL-55BAXI is a high-performance CMOS static RAM designed for providing More Battery Life™ (MoBL®) in portable applications such as cellular phones. With ultra-low active current and an Automatic Power Down feature reducing power consumption by 99%, it offers efficient power management. The device also supports a standby mode and High-Z state for versatile operation. Detailed instructions for write and read operations ensure comprehensive functionality.
Documents
Technical documentation and resources