Discrete Semiconductor Products

UMZ8NTR

NRND

BIPOLAR TRANSISTORS - BJT DUAL PNP/NPN

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Discrete Semiconductor Products

NRND

BIPOLAR TRANSISTORS - BJT DUAL PNP/NPN

Technical Specifications

Parameters and characteristics for this part

Specification	UMZ8NTR

Current - Collector (Ic) (Max)	500 mA, 150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	270, 120
Frequency - Transition	180 MHz, 260 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Supplier Device Package	UMT6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	400 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	12 V

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Frequency - Transition	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature	Supplier Device Package	Current - Collector (Ic) (Max)
Rohm Semiconductor UMZ8NTR	100 nA	Surface Mount	12 V	50 V	6-TSSOP SC-88 SOT-363	180 MHz 260 MHz	1 NPN 1 PNP	250 mV 400 mV	120 270	150 °C	UMT6	150 mA 500 mA

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General part information

BIPOLAR TRANSISTORS - BJT DUAL PNP/NPN

Technical documentation and resources