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DocumentsADC3D10065I | Datasheet
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DocumentsADC3D10065I | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | ADC3D10065I |
|---|---|
| Capacitance | 6.3 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 2 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | TO-220-2 Full Pack |
| Package Name | TO-220F |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 546 | $ 6.78 | 1m+ |
CAD
3D models and CAD resources for this part
Description
General part information
ADC3D10065I
DIODE SIL CARB 650V 10A TO220F
Documents
Technical documentation and resources