Specification	IRFP4668PBF

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	241 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	10720 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	520 W
Rds On (Max) @ Id, Vgs	9.7 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IRFP4668 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology
INFINEON IRFP4668PBF	175 °C	-55 °C	5 V	TO-247-3	10720 pF	30 V	Through Hole	130 A	241 nC	9.7 mOhm	N-Channel	TO-247AC	200 V	520 W	10 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.35
	Tube	1	$ 7.80
		10	$ 5.31
		100	$ 3.89
		500	$ 3.42
Newark	Each	1	$ 5.63
		10	$ 4.74
		25	$ 3.83

Description

General part information

IRFP4668 Series

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

IRFP4668PBF

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IRFP4668PBF

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Technical Specifications

IRFP4668 Series

Pricing

Description

IRFP4668 Series

Documents

Technical Data Sheet EN

IR Part Numbering System

Datasheet

IRFP4668 Series