STMicroelectronics

The VNP35N07-E, VNB35N07-E and VNV35NV07-E are monolithic devices made using STMicroelectronics VIPower®technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

The VNQ500 is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. Active current limitation, combined with latched thermal shutdown, protect the device against overload. In the case of over temperature of one channel the relative I/O pin is pulled down. The device automatically turns off in the case of ground pin disconnection.

The VNQ5027AK-E is a monolithic device made using STMicroelectronics VIPower technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCCpin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device integrates an analog current sense which delivers a current proportional to the load current (according to a known ratio) when CS_DIS is driven low or left open. When CS_DIS is driven high, the CURRENT SENSE pin is in a high impedance condition. Output current limitation protects the device in overload condition. In case of long overload duration, the device limits the dissipated power to safe level up to thermal shut-down intervention. Thermal shut-down with automatic restart allows the device to recover normal operation as soon as fault condition disappears.

The VNQ5050K-E is a monolithic device made using STMicroelectronics VIPower M0-5 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCCpin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). The device detecs open load condition both in on and off state, when STAT_DIS is left open or driven low. Output shorted to VCCis detected in the off state. When STAT_DIS is driven high, the STATUS pin is in a high impedance condition. Output current limitation protects the device in overload condition. In case of long overload duration, the device limits the dissipated power to a safe level up to thermal shut-down intervention. Thermal shut-down with automatic restart allows the device to recover normal operation as soon as the fault condition disappears.

The VNQ5050AK-E is a monolithic device made using STMicroelectronics VIPower M0-5 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCCpin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device integrates an analog current sense which delivers a current proportional to the load current (according to a known ratio) when CS_DIS is driven low or left open. When CS_DIS is driven high, the CURRENT SENSE pin is in a high impedance condition. Output current limitation protects the device in overload condition. In case of long overload duration, the device limits the dissipated power to a safe level up to thermal shut-down intervention. Thermal shut-down with automatic restart allows the device to recover normal operation as soon as the fault condition disappears.

The VNQ5160K-E is a monolithic device made using STMicroelectronics VIPowerTMM0-5 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCCpin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). The device detects open load condition in both on and off states, when STAT_DIS is left open or driven low. Output shorted to VCCis detected in the off state. When STAT_DIS is driven high, the STATUS pin is in a high impedance condition. Output current limitation protects the device in overload condition. In the case of long duration overload, the device limits the dissipated power to a safe level up to thermal shut-down intervention. Thermal shut-down with automatic restart allows the device to recover normal operation as soon as a fault condition disappears.