STP80N240K6N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package | Single FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. |
STP80N600K6N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. |
STP80N900K6N-channel 800 V, 750 mOhm typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. |
STP80NF10N-Channel 100V - 0.012Ohm - 80A - TO-220 LOW GATE CHARGE STripFET(TM) MOSFET | FETs, MOSFETs | 1 | Active | This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. |
STP80NF12N-CHANNEL 120V-0.013 OHM-80A TO-220 STripFET II MOSFET | Discrete Semiconductor Products | 1 | Active | This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. |
STP80NF55-06N-channel 55 V, 5 mOhm, 80 A TO-220 STripFET(TM) II Power MOSFET | FETs, MOSFETs | 1 | Active | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. |
| Discrete Semiconductor Products | 1 | Obsolete | |
| Single | 5 | Obsolete | |
| Transistors | 1 | Active | |
STP8N80K5N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220 package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
