STN3P10F6P-channel -100 V, 0.136 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package | FETs, MOSFETs | 1 | Active | This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
| FETs, MOSFETs | 1 | Active | |
STN4NF03LN-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET | FETs, MOSFETs | 1 | Active | This Power Mosfet is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. |
STN4NF06Automotive-grade N-channel 60 V, 0.07 Ohm typ., 4 A STripFET II Power MOSFET in SOT-223 package | Single FETs, MOSFETs | 1 | Active | This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STN4NF20LN-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package | FETs, MOSFETs | 1 | Active | This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. |
| FETs, MOSFETs | 1 | Active | |
| Bipolar (BJT) | 1 | Obsolete | |
STN790AMedium current, high performance, low Voltage PNP transistor | Single Bipolar Transistors | 1 | Active | The device in manufactured in low voltage PNP planar technology by using a "Base Island" layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. |
| Bipolar (BJT) | 1 | Obsolete | |
STN83003High voltage fast-switching NPN power transistor | Single Bipolar Transistors | 1 | Active | The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor. |
