STHV64SW64-channel (±100 V / -200 to 0 V / 0 to 200 V), low harmonic distortion, highvoltage analog independent switches | Specialized ICs | 1 | Unknown | The STHV64SW is an integrated circuit which features 64 independent switches. It is designed for medical ultrasound applications, but can also be used for driving piezoelectric, capacitive or MEMS transducers, and in industrial application such as generic high voltage switches.
The STHV64SW comprises a shift register for serial communication, self-biased high voltage MOSFET gate drivers, high power N-channel MOSFETs, bleed resistance for each switch, thermal sensor and undervoltage lockout. Moreover, the STHV64SW includes self-biasing and thermal shutdown blocks. The switches are capable of providing up to ±3 A peak output current. |
STHV748Quad ±90 V, ±2 A, 3/5 level, ESD-enhanced high-speed ultrasound pulser | Integrated Circuits (ICs) | 1 | Unknown | This monolithic, high-voltage, high-speed pulser generator features four independent channels. It is designed for medical ultrasound imaging applications, but can also be used to drive piezoelectric, capacitive or MEMS based transducers.
The STHV748S is composed of a controller logic interface circuit, level translators, MOSFET gate drivers, noise blocking diodes, and high-power P-channel and N-channel MOSFETs as the output stage for each channel. It also includes clamping-to-ground circuitry, anti-leakage, anti-memory effect block, thermal sensor, and a T/R switch which guarantees effective decoupling during the transmission phase. The STHV748S also includes self-biasing and thermal shutdown blocks.
Each channel can support up to five active output levels with two half bridges. The output stage of each channel is able to provide ±2 A peak output current. In order to reduce power dissipation during continuous wave mode, a dedicated half-bridge is available and the peak current is limited to 0.6 A.
An ESD reinforced structure was developed to prevent high voltage overshoots and inrush current due to cabled transducer reflections. Each HV output is supported by a dedicate HV diode network to withstand possible reflections, mitigating excessive voltage overshoot that could lead to device damage. |
| Integrated Circuits (ICs) | 1 | Unknown | |
| ADCs/DACs - Special Purpose | 2 | Obsolete | |
STHVUP3232 channels ±100 V, ±0.4/0.8 A, 3/5-level RTZ, TR switch, high-speed ultrasound pulser with integrated transmit beamformer | Integrated Circuits (ICs) | 1 | Active | The STHVUP32 is a 32 channels monolithic high-voltage and high-speed pulser with an integrated beam-former. It is specifically designed for pulse generation in multi-channel low power ultra-portable medical ultrasound applications.
The waveforms generated by STHVUP32 are described with sequences of up to 32 states stored in the device memory. With each state it is possible to configure each individual output channel to be connected to high voltage supplies (positive or negative), clamped to ground or left in high impedance.
A pure analog section provides each channel four half-bridges (four high-voltage P-channel and four high-voltage N-channel MOSFETs), a clamping-to-ground circuit and a transmitting/receiving switch structure which guarantees an effective isolation during the transmission phase. Each channel features also integrated high-voltage level translators and noise-blocking diodes.
Through a dedicated bit, channels can be programmed as a 3-level output or as a 5-level output. In 3-level mode, the four half-bridges are driven in parallel to provide a default peak current of 800 mA. However, it is also possible to program a low-consumption and low output current modes to decrease the overall power consumption: in this case, it is possible to use only one, two or three half-bridges, therefore the peak current can be reduced to 200, 400 or 600 mA respectively. In 5-level mode, the four half-bridges can be driven independently, and each half-bridge has a current capability of 200 mA. The clamp circuit, used to force the XDCR<31:0> output pins down to ground, has a resistance of 23 Ω and a peak current capability of 0.64 A. The 32 independent T/R switches can be used in a multiplexing configuration.
The STHVUP32 also includes some global blocks: thermal protection circuits, undervoltage checks on VDDP3V3, VDDM3V3 and DVDD, a power-on-reset (POR) on DVDD and a global self-biased supply for the drivers of the high-voltage MOSFET.
All functions are managed by a digital core working at a maximum clock frequency of 200 MHz. This block manages the delay profiles used in the beamformer, the waveform generation and the various global settings and grants that all the device operations are performed in the correct sequence. |
STHVUP6464 channels ±100 V, ±0.2/0.4 A, 3/5-level RTZ, TR switch, high-speed ultrasound pulser with integrated transmit beamformer | Integrated Circuits (ICs) | 1 | Active | The STHVUP64 is a 64 channels monolithic high-voltage and high-speed pulser with an integrated beamformer. It is specifically designed for pulse generation in multi-channel low-power ultra-portable medical ultrasound applications.
The waveforms generated by STHVUP64 are described with sequences of up to 32 states stored in the device memory. With each state it is possible to configure each individual output channel to be connected to high voltage supplies (positive or negative), clamped to ground or left in high impedance.
A pure analog section provides each channel two half-bridges (two high-voltage P-channel and two high-voltage N-channel MOSFETs), a clamping-to-ground circuit and a transmitting/receiving switch structure which guarantees an effective isolation during the transmission phase. Each channel features also integrated high-voltage level translators and noise-blocking diodes.
Through a dedicated bit, channels can be programmed as a 3-level output or as a 5-level output. In 3-level mode, the two half-bridges are driven in parallel to provide a default peak current of 400 mA. However, it is also possible to program a low-consumption and low output current modes to decrease the overall power consumption: in this case, only one half-bridge is used and the output current lowers down to 200 mA. In 5-level mode, the two half-bridges can be driven independently, and each half-bridge has a current capability of 200 mA. The clamp circuit, used to force the XDCR<63:0> output pins down to ground, has a resistance of 45 Ω and a peak current capability of 0.32 A. The 64 independent T/R switches can be used in a multiplexing configuration.
The STHVUP64 also includes some global blocks: thermal protection circuits, undervoltage checks on VDDP3V3, VDDM3V3 and DVDD, a power-on-reset (POR) on DVDD and a global self-biased supply for the drivers of the high-voltage MOSFET.
All functions are managed by a digital core working at a maximum clock frequency of 200 MHz. This block manages the delay profiles used in the beamformer, the waveform generation and the various global settings and grants that all the device operations are performed in the correct sequence. |
| Single FETs, MOSFETs | 1 | Obsolete | |
| Single FETs, MOSFETs | 1 | Obsolete | |
STI13NM60NN-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| Transistors | 1 | Obsolete | |
