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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(7415)

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Part	Category	Description
STMicroelectronics STEVAL-ISA068V1Obsolete	Development Boards Kits Programmers	EVAL BOARD FOR ST1S32
STMicroelectronics 74VCXHQ163245TTRObsolete	Integrated Circuits (ICs)	IC TRANSLATION TXRX 2.7V 48TSSOP
STMicroelectronics EV-VNQ9050LAJ	Development Boards Kits Programmers	VNQ9050LAJ EVALUATION BOARD
STMicroelectronics LSM303DLHCTRObsolete	Sensors Transducers	IMU ACCEL/MAG 3-AXIS I2C 14LGA
STMicroelectronics M93C56-WMN6TObsolete	Integrated Circuits (ICs)	EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R
STMicroelectronics STM32U375CGT6	Integrated Circuits (ICs)	STM32U
STMicroelectronics TS831-3IZObsolete	Integrated Circuits (ICs)	IC SUPERVISOR 1 CHANNEL TO92-3
STMicroelectronics STMPE1208SQTRObsolete	Integrated Circuits (ICs)	IC I/O EXPANDER I2C 12B 40QFN
STMicroelectronics STM32L1-MAGNETObsolete	Development Boards Kits Programmers	IAR EXPERIMENT STM32 L1 EVAL BRD
STMicroelectronics VNB35N07Obsolete	Integrated Circuits (ICs)	IC PWR DRIVER N-CHAN 1:1 D2PAK

Series	Category	# Parts	Status	Description

STB45N30M5N-channel 300 V, 37 mOhm typ., 53 A MDmesh M5 Power MOSFET in a D2PAK Package	Discrete Semiconductor Products	1	Active	This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
STB45N40DM2AGAutomotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET in a D2PAK package	FETs, MOSFETs	1	Active	This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STB45N50DM2AGAutomotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in a D2PAK package	Transistors	1	Active	This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STB45N60DM2AGAutomotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a D2PAK package	Single FETs, MOSFETs	1	Active	This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STB45N60DM6N-channel 600 V, 85 mOhm typ., 30 A MDmesh DM6 Power MOSFET in a D2PAK package	FETs, MOSFETs	1	Active	This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
STB45N65M5N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in D2PAK package	Transistors	1	Active	These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
STB46	Transistors	1	Active
STB46N60M6N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a D2PAK package	FETs, MOSFETs	1	Active	The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
STB46NF30N-channel 300 V, 63 mOhm typ., 42 A STripFET II Power MOSFET in a D2PAK package	Single FETs, MOSFETs	1	Active	These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
STB47N50DM6AGAutomotive-grade N-channel 500 V, 61 mOhm typ., 38 A MDmesh DM6 Power MOSFET in a D2PAK package	Discrete Semiconductor Products	1	Active	This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.