STMicroelectronics

This 3 A, 100 V rectifier is based on ST trench technology that achieves the best-in-class VF/IR trade-off for a given silicon surface. Integrated in flat and space-saving packages, this STPST3H100 trench rectifier is intended to be used in high frequency miniature switched mode power supplies. It is also an ideal candidate for auxiliary power supply in telecom, server, or smart metering. ST trench rectifiers are adapted to freewheeling, OR-ring or reverse polarity protection applications, and can be the perfect companion device to our transistors, drivers, or ST VIPer products.

This 5 A, 100 V rectifier is based on ST trench technology that achieves the best-in-class VF/IR trade-off for a given silicon surface. Integrated in flat and space-saving packages, this STPST5H100 trench rectifier is intended to be used in high frequency miniature switched mode power supplies. It is also an ideal candidate for auxiliary power supply in telecom, server, or smart metering. ST trench rectifiers are adapted to freewheeling, OR-ring or reverse polarity protection applications, and can be the perfect companion device to our transistors, drivers, or ST VIPer products.

This 8 A, 100 V rectifier is based on ST trench technology that achieves the best-in-class VF/IR trade-off for a given silicon surface. Integrated in flat and space-saving packages, this STPST8H100 trench rectifier is intended to be used in high frequency miniature switched mode power supplies. It is also an ideal candidate for auxiliary power supply in telecom, server, or smart metering. ST trench rectifiers are adapted to freewheeling, OR-ring or reverse polarity protection applications, and can be the perfect companion device to our transistors, drivers, or ST VIPer products.

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

This device is a high voltage fast-switching PNP power transistor, manufactured using high voltage multi-epitaxial planar technology for high switching speeds. It employs a cellular emitter structure with planar edge termination to enhance switching speeds, while maintaining a wide RBSOA.

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.

The STR485 is a low power differential line transceiver for data transmission standard RS485 applications in half-duplex mode. Data and enable signals are compatible with 1.8 V or 3.3 V supplies. Two speeds are selectable through SLR pin: fast data rate up to 20 Mbps or slow data rate for extended cable running to 250 kbps. Excessive power dissipation caused by bus contention or faults is prevented by thermal shutdown circuit that forces the driver outputs into a high impedance state. The receiver has a fail-safe feature, which guarantees a high output state when the inputs are left open, shorted or idle.