| Single Diodes | 2 | LTB | |
| Single | 2 | Active | The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. |
STPSC10H065DLF2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode | Arrays | 8 | Active | The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. |
STPSC10H065G2650 V, 10 A High Surge Silicon Carbide Power Schottky Diode | Single Diodes | 1 | Active | This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.
The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. |
| Diodes | 1 | Active | This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.
The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. |
STPSC10H12G2Y-TRAutomotive Grade 1200V, 10A, silicon carbide power Schottky Diode | Rectifiers | 1 | Active | This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.
The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. |
| Rectifiers | 1 | Obsolete | |
STPSC12065-YAutomotive 650 V, TO-220 D2PAK SiC Power Schottky Diode | Single Diodes | 3 | Active | The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. |
| Rectifiers | 1 | Active | This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.
The STPSC15H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. |
STPSC16H065A650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode | Discrete Semiconductor Products | 1 | Active | The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode, packaged in TO-247, will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. |
