STP57N65M5N-channel 650 V, 56 mOhm typ., 42 A MDmesh M5 Power MOSFET in a TO-220 package | Transistors | 1 | Active | These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. |
| Transistors | 1 | Obsolete | |
STP5N80K5N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for application requiring superior power density and high efficiency. |
STP5NK50ZN-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in TO-220 package | Discrete Semiconductor Products | 1 | Active | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP5NK52ZDN-channel 520V - 1.22Ohm - 4.4A - TO-220 - DPAK - I2PAK - IPAK | Transistors | 1 | NRND | The SuperFREDMesh series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the "FDmesh" advanced technology. |
STP5NK60ZFPN-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in a TO-220FP package | FETs, MOSFETs | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP5NK80ZN-channel 800 V, 1.9 Ohm typ., 4.3 A SuperMESH Power MOSFET in a TO-220 package | FETs, MOSFETs | 1 | Active | This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
| Discrete Semiconductor Products | 4 | Active | |
STP60NF06FPN-Channel 60V - 0.014Ohm - 60A - TO-220FP StripFET(TM) II POWER MOSFET | Single | 1 | NRND | This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. |
STP65N045M9N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO-220 package | FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on)per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. |
