STN1NK60ZN-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH Power MOSFET in SOT-223 package | Single FETs, MOSFETs | 1 | Active | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STN1NK80ZN-channel 800 V, 13 Ohm typ., 250 mA SuperMESH Power MOSFET in a SOT-223 package | Discrete Semiconductor Products | 1 | Active | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STN2580High voltage fast-switching NPN power transistor | Single Bipolar Transistors | 1 | Active | This device is a high voltage fast-switching NPN power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. |
| Discrete Semiconductor Products | 1 | Active | |
STN3P6F6P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package | Transistors | 1 | Active | This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STN6N60M2N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STN851LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | Single Bipolar Transistors | 1 | Active | The device is manufactured in Planar Technology with "Base Island" layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. |
| Single Bipolar Transistors | 1 | Obsolete | |
STN9260High voltage fast-switching PNP power transistor | Bipolar (BJT) | 1 | Active | This device is a high voltage fast-switching PNP power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. |
