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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
 STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
 STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
 STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
 STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
 STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
 STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
 STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
 STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Evaluation and Demonstration Boards and Kits | 1 | Active | ||
| Single FETs, MOSFETs | 1 | Active | ||
SCT012H90G3AGAutomotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package | Discrete Semiconductor Products | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT015W120G3-4AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package | Single FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT016H120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package | FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT018H65G3-7Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package | Transistors | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT018H65G3AGAutomotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package | Single FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT018W65G3-4AGAutomotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package | Discrete Semiconductor Products | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT020H120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package | FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT020HU120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package | Transistors | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |