STD8N60DM2N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package | Transistors | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STD8N80K5N-channel 800 V, 800 mOhm typ., 6 A MDmesh K5 Power MOSFET in a DPAK package | Transistors | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
| FETs, MOSFETs | 1 | Active | |
STD8NM50NN-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in DPAK | Discrete Semiconductor Products | 1 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. |
| Single FETs, MOSFETs | 2 | Obsolete | |
STD95N4LF3N-channel 40 V, 5 mOhm, 80 A STripFET(TM) III Power MOSFET in DPAK package | FETs, MOSFETs | 3 | Active | These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. |
STD96N3LLH6N-channel 30 V, 0.0037 Ohm typ., 80 A, in DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET | Discrete Semiconductor Products | 1 | Active | This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. |
| FETs, MOSFETs | 1 | Obsolete | |
STD9NM60NN-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package | Single | 2 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. |
| Single FETs, MOSFETs | 2 | Obsolete | |
