STMicroelectronics

The EVSPIN958 single brushed DC motor driver expansion board is based on the STSPIN958. It provides an affordable and easy-to-use solution for the implementation of brushed DC motor driving applications. Thanks to the parallel operation, it can be easily converted to a single half-bridge with double current capability. In addition to the internal current limiter, the integrated amplifiers allow it to be used in systems with external current control. The EVSPIN958 is compatible with the Arduino®UNO R3 connector and most STM32 Nucleo boards.

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs. The EVSTDRIVEG60015 board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving the SGT120R65AL 75 mΩ typ., 650 V E-Mode GaN switches. It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers. Spare footprints are also included to allow customizing the board for the final application, such as separate LIN and HIN input signals or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies. The EVSTDRIVEG60015 is 50 x 70 mm wide, FR-4 PCB resulting in 25 °C/W Rth(J‑A) in still air.

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs. The EVSTDRIVEG600DG board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 650 V e-Mode GaN switches. It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers. Spare footprints are also included to allow customizing the board for the final application, such as separate input signal or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies. The EVSTDRIVEG600DG is 50 x 70 mm wide, FR-4 PCB resulting in 25 °C/W Rth(J‑A) in still air.

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V. The EVSTDRIVEG600DM board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 600V MDmesh DM2 Power MOSFET with fast recovery diode. It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers. Spare footprints are also included to allow customizing the board for the final application, such as separate input signal or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies. The EVSTDRIVEG600DM is 54 x 88 mm wide, FR-4 PCB resulting in 20 °C/W Rth(J‑A)in still air.

The EVSTGAP2GS is a half bridge evaluation board designed to evaluate the STGAP2GS isolated single gate driver. The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as power conversion and motor driver inverters in industrial applications. The device allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The device integrates protection functions including thermal shutdown and UVLO with optimized level for enhancement-mode GaN transistors, which enables easy design high efficiency and reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The device allows implementing negative gate driving, and the on board isolated DC-DC converters allows working with optimized driving voltage for e-mode GaN transistors. The EVSTGAP2GS board allows evaluation of all the STGAP2GS features driving the SGT120R65AL 75 mΩ, 650 V e-Mode GaN transistors. The board components are easy to access and modify in order to make driver performance evaluation easier under different application conditions and fine adjustment of final application components.

The EVSTGAP2GSN is a half bridge evaluation board designed to evaluate the STGAP2GSN isolated single gate driver. The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as power conversion and motor driver inverters in industrial applications. The device allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The device integrates protection functions including thermal shutdown and UVLO with optimized level for enhancement-mode GaN transistors, which enables easy design high efficiency and reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The device allows implementing negative gate driving, and the on board isolated DC-DC converters allows working with optimized driving voltage for e-mode GaN transistors. The EVSTGAP2GSN board allows evaluating all the STGAP2GSN features driving the SGT120R65AL 75 mΩ, 650 V e-Mode GaN transistors. The board components are easy to access and modify to make driver performance evaluation easier under different application conditions and fine adjustment of final application components.

The EVSTGAP2SICSAC is a half bridge evaluation board designed to evaluate the STGAP2SICSAC isolated single gate driver The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as motor drivers in industrial applications equipped with SiC MOSFET power switches. The device has a single output pin and Miller CLAMP function that prevents gate spikes during fast commutations in half-bridge topologies. This configuration provides high flexibility and bill of material reduction for external components. The device integrates protection functions: UVLO with optimized value for SiC MOSFETs and thermal shut down are included to easily design high reliability systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The device allows implementing negative gate driving, and the on board isolated DC-DC converters allows working with optimized driving voltage for SiC MOSFET. The EVSTGAP2SICSAC board allows evaluating all the STGAP2SICSAC features while driving a half-bridge power stage with voltage rating up to 520 V. It is possible to increase bus voltage by replacing the power switches with appropriate devices in H2PACK-7L or H2PACK-2L or HU3PAK package and the C29 capacitance if needed. The board components are easy to access and modify in order to make driver performance evaluation easier under different application conditions and fine adjustment of final application components.

The EVSTGAP2SICSANC is a half bridge evaluation board designed to evaluate the STGAP2SICSANC isolated single gate driver. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for mid and high power inverter applications such as motor drivers in industrial applications equipped with SiC MOSFET power switch. The device has a single output pin and Miller CLAMP function that prevents gate spikes during fast commutations in half-bridge topologies. This configuration provides high flexibility and bill of material reduction for external components. The device integrates protection functions: UVLO with optimized value for SiC MOSFETs and thermal shut down are included to easily design high reliability systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The device allows implementing negative gate driving, and the on-board isolated DC-DC converters allow working with optimized driving voltage for SiC. The EVSTGAP2SICSANC board allows evaluating all the STGAP2SICSANC features while driving a half-bridge power stage with voltage rating up to 520 V. It is possible to increase bus voltage by replacing the power switches with appropriate devices in H2PACK-7L or H2PACK-2L or HU3PAK package and the C29 capacitance if needed. The board components are easy to access and modify to make driver performance evaluation easier under different application conditions and fine adjustment of final application components.

The EVSTGAP2SICSN is a half-bridge evaluation board designed to evaluate the STGAP2SICSN isolated single gate driver. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in industrial applications equipped with SiC power switch. The separated source and sink outputs allow to independently optimize turn-on and turn-off by using dedicated gate resistors. The device integrates protection functions: UVLO and thermal shutdown are included to easily design high reliability systems. Dual input pins allow choosing the control signal polarity and implementing HW interlocking protection to avoid cross-conduction in case of controller's malfunction. The device allows implementing negative gate driving, and the on-board isolated DC-DC converters allow working with optimized driving voltage for SiC. The EVSTGAP2SICSN board allows evaluating all the STGAP2SICSN features while driving a half-bridge power stage with voltage rating up to 520 V. It is possible to increase bus voltage by replacing the power switches with appropriate devices in H2PACK-7L or H2PACK-2L package and the C29 capacitance if needed. The board components are easy to access and modify to make driver performance evaluation easier under different application conditions and fine adjustment of final application components.