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Renesas Electronics Corporation

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(27639)

...

Part	Category	Description
Renesas Electronics Corporation RV1S9356ACCSP-120V#KC0	Integrated Circuits (ICs)	RV1S9356ACCSP-120V#KC0
Renesas Electronics Corporation XLH73V044.736000X	Crystals Oscillators Resonators	XTAL OSC VCXO 44.7360MHZ HCMOS
Renesas Electronics Corporation R7F7015693AFD#KA2Obsolete	Integrated Circuits (ICs)	IC MCU
Renesas Electronics Corporation NE677M04-AObsolete	Discrete Semiconductor Products	RF TRANS NPN 6V 15GHZ SOT343F
Renesas Electronics Corporation IDT71V416L10YIObsolete	Integrated Circuits (ICs)	IC SRAM 4MBIT PARALLEL 44SOJ
Renesas Electronics Corporation IDT71V424YS10PHObsolete	Integrated Circuits (ICs)	IC SRAM 4MBIT PARALLEL 44TSOP II
Renesas Electronics Corporation R5F5651CDGBP#20	Integrated Circuits (ICs)	IC MCU 32BIT 1.5MB FLASH 64TFBGA
Renesas Electronics Corporation UPG2214TB-AObsolete	RF and Wireless	IC RF SWITCH SPDT 3GHZ 6-SMINI
Renesas Electronics Corporation R5F212J1SNSP#U0Obsolete	Integrated Circuits (ICs)	IC MCU 16BIT 4KB FLASH 20LSSOP
Renesas Electronics Corporation R7FA6E10F2CFM#AA5	Integrated Circuits (ICs)	MCU RA6 ARM CM33 200MHZ 512K/256

Series	Category	# Parts	Status	Description

UPD46185362BF1-E33-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Integrated Circuits (ICs)	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46185364BF1-E40-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Memory	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46185364BF1-E40Y-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Integrated Circuits (ICs)	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46364182BF1-E33-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Integrated Circuits (ICs)	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46364185BF1-E33-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Integrated Circuits (ICs)	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46364185BF1-E40-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Integrated Circuits (ICs)	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46364362BF1-E33-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Integrated Circuits (ICs)	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46364362BF1-E40Y-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Integrated Circuits (ICs)	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46364365BF1-E40-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Memory	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。
UPD46365084BF1-E40-EQ1-AQDRII/DDRII/ QDRII+/DDRII+ SRAM	Memory	1	Active	DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。