O
ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
MMBZ15VDZener Diode Protection, 40 Watt Peak Power, SOT-23 | TVS | 4 | Active | These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. |
MMBZ27VAWZener Diode Protection, 40 Watt Peak Power, SOT-23 | Zener Diode Arrays | 4 | Active | The Dual Common Anode Zener Diode Transient Voltage Suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. The dual junction common anode design protects two separate lines using only one package. This device is ideal for situations where board space is at a premium. |
MMBZ27VCWZener Diode Protection, Common Cathode, 40 Watt Peak Power, SOT-23 | Transient Voltage Suppressors (TVS) | 3 | Active | These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. |
| Diodes | 2 | Obsolete | ||
MMBZ52%20E-SERIESEnergy Rated Zener Diode Voltage Regulator, 225 W, 16V, SOT-23 | Single Zener Diodes | 105 | Active | This series of Zener diodes is offered in the convenient, surface mount SOT-23 plastic package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as automotive control units, industrial control modules and high density PC boards. |
MMBZH15VAW40W Dual Common Anode Zener Diode Series, +175°C | Circuit Protection | 1 | Active | This Common Anode Zener Diode series offered in SC-70 (SOT-323) package is designed for use in applications requiring transient overvoltage and ESD protection capability. Their dual junction common anode design protects two separate lines using only one package. The device features a +175°C TJ(MAX)specification and thus rated for high temperature and mission critical applications. |
MMDF1N05EPower MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8 | Arrays | 2 | Obsolete | These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. |
MMDF2P02HDPower MOSFET 20V 3.3A 160 mOhm Dual P-Channel SO-8 | Transistors | 3 | Obsolete | These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. |
MMDF3N02HDPower MOSFET 40V 3.4A 80 mOhm Dual N-Channel SO-8 | Single | 2 | Obsolete | These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. |
MMDL101Schottky Diode UHF 7.0 V | RF Diodes | 1 | Obsolete | These Schottky diodes are designed primarily for high efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. |