Beta

⌘K

O

ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

...

Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FNB81560T3Intelligent Power Module, 600 V, 15A	Power Driver Modules	2	Active	FNB81560T3 is a Motion SPM 8 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs tominimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, inter-lock function, over-current shutdown, thermal monitoring of drive IC, and fault reporting. Thebuilt-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's robust shortcircuit-rated IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms.
FNC42060F2Intelligent Power Module (IPM), 600V, 20A	Discrete Semiconductor Products	2	NRND	FNC42060F is a power module for motion control, Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in Low-Power Applications Such as Air Conditioners and Industrial Inverter. It Combines Low-Loss Short-Circuit Rated IGBTs and Optimized Gate Drivers in A Fully Isolated Package to Deliver A Simple and Robust Design. The System Reliability Is Further Enhanced by The Built-In NTC for Temperature Monitoring, Integrated Under-Voltage Lock-Out Function for Both High and Low Side, and An Over-Current Protection Input. Three Separate Open-Emitter Pins for Low Side IGBTs Make Three Leg Current Sensing Possible. Built-In Bootstrap Diodes and Dedicated VS Pins Make PCB Layout Easy.
FND310	Optoelectronics	1	Obsolete
FND317	LED Character and Numeric	1	Obsolete
FND318	LED Character and Numeric	1	Obsolete
FND320	LED Character and Numeric	1	Obsolete
FND327	Optoelectronics	1	Obsolete
FNF50560TD1Intelligent Power Module, 600 V, 5A	Discrete Semiconductor Products	1	Obsolete	Intelligent Power Module, 600 V, 5A
FOD050LSO-8L, 1 Mbit/s, LVTTL/LVCMOS 3.3 V High Speed Transistor Optocouplers	Transistor, Photovoltaic Output Optoisolators	2	Active	The FOD050L and FOD053L optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. These devices are specified for operation at a 3.3 V supply voltage.A separate connection for the bias of the photodiode improves the speed by several orders of magnitude over conventional phototransistor optocouplers by reducing the base-collector capacitance of the input transistor..An internal noise shield provides superior common mode rejection of CMH= 50 kV/μs (typical) and CML= 35 kV/μs (typical).
FOD053LSO 8L, 1 Mbit/s, LVTTL/LVCMOS 3.3 V High Speed Transistor Optocouplers	Isolators	2	Active	The FOD050L and FOD053L optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. These devices are specified for operation at a 3.3 V supply voltage.A separate connection for the bias of the photodiode improves the speed by several orders of magnitude over conventional phototransistor optocouplers by reducing the base-collector capacitance of the input transistor..An internal noise shield provides superior common mode rejection of CMH= 50 kV/μs (typical) and CML= 35 kV/μs (typical).