ON Semiconductor

The FAD3171MXA is a single channel floating automotive gate driver suitable for driving high−speed power MOSFETs up to 110V.  Designed in a SOI technology, the driver is ideal for applications that require noise immunity against severe negativetransients and ground offset up to −80 V. The FAD3171MXA driver has integrated desaturation detection to protect power switches during short−circuit and over−current conditions. The driver is also equipped with a soft shutdown feature, which initiates a soft shutdown of driver outputs upon desat detection, thus preventing possible overvoltage across power MOSFETs during a heavy−load condition.The FAD3171MXA driver is equipped with bidirectional fault reporting pin that can generate a fault output during desat and under−voltage lockout (UVLO) condition. The bidirectional nature of the fault−reporting pin allows the driver to respond to external fault commands, thereby facilitating fault communication across the system. In addition, the FAD3171MXA has an integrated charge pump to support 100% duty cycle operation of high side MOSFETs.In summary, the FAD3171MXA is a versatile driver with features like desat detection, soft shutdown, fault reporting capability, UVLO protection, and charge pump.  Designed to be used with the FAD3151MXA

The FAD6263 is an automotive half bridge gate-driver IC, providing 2 complementary outputs for driving power MOSFETs or IGBTs.The output stages have separate pull up and pull down transistor to adjust the turn on and turn off speed without the need of external diodes. It saves the cost of external passive components as well as PCB space.The protection feature includes an Under Voltage Lock Out (UVLO) for both channels, as well as a shutdown pin that can be used either as an enable pin or in a latch state. The shutdown state is cleared with a separate Reset pin.The SOIC16 package provides enough clearance and creepage distance for HV application, as well as a separate signal and power ground for enhance immunity against ground offset, down to -8V.ON Semiconductor’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high dV/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS = -10V for VBS = 15V.

The FAN7171MX is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction.Onsemi’s high-voltage process and common-mode noise cancelling techniques provide stable operation of the high-side driver under high-dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-13V (typical) for VBS=15V.The UVLO circuit prevents malfunction when VBSis lower than the specified threshold voltage.The high-current and low-output voltage drop feature makes this device suitable for sustaine switch driver and energy recovery switch driver in the Plasma Display Panel application, motor drive inverter, switching power supply, and high-power DC-DC converter applications.

The FAD7191 is a monolithic high- and low-side gate-driver IC, which can drive high speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse driving capability and minimum cross-conduction.ON Semiconductor’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high dV/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS = -9.8V (typical) for VBS= 15V.The UVLO circuit prevents malfunction when VDD and VBS are lower than the specified threshold voltage.The high current and low output voltage drop features make this device suitable for controlling direct injection actuators and for use in many automotive DC-DC converter and motor control applications.The FAD7191 in 14-SOP package has separate signal and power ground for higher noise immunity in high power application, sufficient clearance and creepage distance necessary for High Voltage applications as well as an Enable pin for shutdown redundancy purpose