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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
1N5400Standard Recovery Rectifier, 50 V, 3.0 A | Discrete Semiconductor Products | 3 | Active | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
| Diodes | 1 | Obsolete | ||
1N5402Standard Recovery Rectifier, 200 V, 3.0 A | Rectifiers | 1 | Obsolete | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N5404Standard Recovery Rectifier, 400 V, 3.0 A | Rectifiers | 1 | Obsolete | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N5406Standard Recovery Rectifier, 600 V, 3.0 A | Single | 2 | Active | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N5407Standard Recovery Rectifier, 800 V, 3.0 A | Single | 2 | Active | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N5408Standard Recovery Rectifier, 1000 V, 3.0 A | Diodes | 1 | NRND | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N58171.0 A, 20 V, Schottky Rectifier | Single Diodes | 2 | Active | The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. |
1N58181.0 A, 30 V, Schottky Rectifier | Single | 3 | Active | The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. |
1N58191.0 A, 40 V, Schottky Barrier Rectifier | Discrete Semiconductor Products | 1 | Obsolete | The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. |
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |