1N5400Standard Recovery Rectifier, 50 V, 3.0 A | Discrete Semiconductor Products | 3 | Active | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
| Diodes | 1 | Obsolete | |
1N5402Standard Recovery Rectifier, 200 V, 3.0 A | Rectifiers | 1 | Obsolete | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N5404Standard Recovery Rectifier, 400 V, 3.0 A | Rectifiers | 1 | Obsolete | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N5406Standard Recovery Rectifier, 600 V, 3.0 A | Single | 2 | Active | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N5407Standard Recovery Rectifier, 800 V, 3.0 A | Single | 2 | Active | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N5408Standard Recovery Rectifier, 1000 V, 3.0 A | Diodes | 1 | NRND | The Standard Recovery Rectifier is designed for use in power supplies and other applications. |
1N58171.0 A, 20 V, Schottky Rectifier | Single Diodes | 2 | Active | The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. |
1N58181.0 A, 30 V, Schottky Rectifier | Single | 3 | Active | The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. |
1N58191.0 A, 40 V, Schottky Barrier Rectifier | Discrete Semiconductor Products | 1 | Obsolete | The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. |