O
ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
UESD6.0DESD Protection Common Anode Diodes | Transient Voltage Suppressors (TVS) | 1 | Active | The uESD Series is designed to protect voltage sensitive componentsfrom ESD and transient voltage events. Excellent clamping capability,low leakage, and fast response time, make these parts ideal for ESDprotection on designs where board space is at a premium. Because of itssmall size, it is suited for use in cellular phones, portable devices, digitalcameras, power supplies and many other portable applications. |
| Discrete Semiconductor Products | 1 | Obsolete | ||
UF40031.0A Ultra Fast Recovery Rectifier | Single Diodes | 6 | Active | 1.0A Ultra Fast Recovery Rectifier |
UJ3D1210KSSilicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 10A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Diodes | 1 | Active | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. |
ULN2003Darlington Transistor Driver Array | Power Distribution Switches, Load Drivers | 1 | Active | The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The ULx2003A with a 2.7 kΩ series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic. |
UMC3Complementary Bipolar Digital Transistor (BRT) | Bipolar Transistor Arrays, Pre-Biased | 2 | Active | The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium. |
UMC5Complementary Bipolar Digital Transistor (BRT) | Transistors | 3 | Active | The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium. |
UMZ1NNPN PNP Bipolar Transistor | Bipolar (BJT) | 1 | Obsolete | The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications. |
US1AFASuper Fast Surface Mount Rectifiers | Single Diodes | 1 | NRND | Super Fast Surface Mount Rectifiers |
US1BFASuper Fast Surface Mount Rectifiers | Diodes | 1 | Active | Super Fast Surface Mount Rectifiers |