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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | SA65 COMMERCIAL NON ROHS |
Microchip Technology | Crystals Oscillators Resonators | SA65 INDUSTRIAL NON ROHS |
Microchip Technology | Crystals Oscillators Resonators | LOW NOISE CHIP SCALE ATOMIC CLOC |
Microchip Technology | Crystals Oscillators Resonators | LOW NOISE CHIP SCALE ATOMIC CLOC |
Microchip Technology | Integrated Circuits (ICs) | MAC-SA53-EU (BASE PERFORMANCE) |
Microchip Technology | Integrated Circuits (ICs) | MAC-SA55-EU (HIGH PERFORMANCE) |
Microchip Technology | Integrated Circuits (ICs) | MAC-SA57 (ULTRA-HIGH PERFORMANCE |
Microchip Technology | Integrated Circuits (ICs) | MAC-SA57-EU (ULTRA-HIGH PERFORMA |
Microchip Technology | Discrete Semiconductor Products | RF MOSFET HEMT 50V 55-KR |
Microchip Technology | Discrete Semiconductor Products | RF MOSFET GAN 50V 55-QQ |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
JANTXV2N3749-TransistorMIL-PRF-19500/315 | Discrete Semiconductor Products | 1 | Unknown | This 2N3749 silicon NPN transistor is rated at 5 amps and is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-111 isolated package which features a 180 degree lead orientation. |
JANTXV2N3997-TransistorNPN Silicon High-Speed Power 80V, 10A | Discrete Semiconductor Products | 1 | Unknown | This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die. |
JANTXV2N4029-TransistorPNP Silicon Switching -80V, -1A | Bipolar (BJT) | 1 | Unknown | This specification covers the performance requirements for PNP silicon, 2N4029 and 2N4033 transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/512 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JANTXV2N4033-TransistorPNP Silicon Switching -80V, -1A | Single Bipolar Transistors | 1 | Unknown | This specification covers the performance requirements for PNP silicon, 2N4029 and 2N4033 transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/512 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JANTXV2N5154-TransistorNPN Silicon Power 80V, 2A | Transistors | 1 | Unknown | This specification covers the performance requirements for NPN, silicon, power, 2N5152 and 2N5154 transistors, complimentary to the 2N5151 and 2N5153 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/544. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. |
JANTXV2N5339U3-TransistorNPN Silicon Switching 100V, 5A | Bipolar (BJT) | 1 | Unknown | This specification covers the performance requirements for NPN silicon switching, 2N5339 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/560 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/560. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JANTXV2N5416UA-TransistorMIL-PRF-19500/485 | Single Bipolar Transistors | 1 | Unknown | This family of 2N5415 and 2N5416 epitaxial planar PNP transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) and low profile surfacemount U4, U4 and UA packaging. |
JANTXV2N5582-TransistorNPN Silicon Switching 50V, 0.8A | Single Bipolar Transistors | 1 | Unknown | This specification covers the performance requirements for NPN, silicon, switching 2N5581 and 2N5582 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/423. |
JANTXV2N5666-TransistorNPN Silicon Power Switching 200V to 300V, 5A | Single Bipolar Transistors | 1 | Unknown | This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. |
JANTXV2N5684-TransistorPNP Silicon Power -60V to -80V, 50A | Discrete Semiconductor Products | 1 | Unknown | This specification covers the performance requirements for PNP, silicon, power, 2N5683 and 2N5684 transistors, complimentary to 2N5686 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/466. |