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Microchip Technology

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(31808)

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Part	Category	Description
Microchip Technology VCC1-B2D-24M0000000	Crystals Oscillators Resonators	CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM
Microchip Technology DSC1003CI2-033.0000T	Crystals Oscillators Resonators	MEMS OSC
Microchip Technology SAMA7G54D2GT-I/4UB	Integrated Circuits (ICs)	1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L
Microchip Technology JANTXV1N3890R	Discrete Semiconductor Products	DIODE GEN PURP 100V 12A DO203AA
Microchip Technology MSMBJ5372BLTB	Circuit Protection	VOLTAGE REGULATOR
Microchip Technology MCP60711T-E/OT	Integrated Circuits (ICs)	OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS
Microchip Technology LE9531CMQCTObsolete	Integrated Circuits (ICs)	IC TELECOM INTERFACE 28QFN
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete	Integrated Circuits (ICs)	IC TRANSCEIVER
Microchip Technology PIC16F628-20E/SO	Integrated Circuits (ICs)	MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE
Microchip Technology VCC6-LCF-212M500000Obsolete	Crystals Oscillators Resonators	DIFFERENTIAL XO +3.3 VDC +/-5% L

Series	Category	# Parts	Status	Description

VN0550MOSFET, N-Channel Enhancement-Mode, 500V, 60 Ohm	Discrete Semiconductor Products	2	Active	This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN0606MOSFET, N-Channel Enhancement-Mode, 60V, 3.0 Ohm	Transistors	1	Active	This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN10KN3MOSFET, N-Channel Enhancement-Mode, 60V, 5.0 Ohm	Discrete Semiconductor Products	3	Active	This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN1206MOSFET, N-Channel Enhancement-Mode, 120V, 6.0 Ohm	Discrete Semiconductor Products	2	Active	This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN2106MOSFET, N-Channel Enhancement-Mode, 60V, 4.0 Ohm	Single FETs, MOSFETs	1	Active	This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN2110MOSFET, N-Channel Enhancement-Mode, 100V, 4.0 Ohm	Transistors	1	Active	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN2210MOSFET, N-Channel Enhancement-Mode, 100V, 0.35 Ohm	Single FETs, MOSFETs	1	Active	VN2210 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN2222LMOSFET, N-Channel Enhancement-Mode, 60V, 7.5 Ohm	Transistors	3	Active	This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
VN2410MOSFET, N-Channel Enhancement-Mode, 240V, 10 Ohm	Single FETs, MOSFETs	2	Active	This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN2450MOSFET, N-Channel Enhancement-Mode, 500V, 13 Ohm	Transistors	2	Active	This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.