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Microchip Technology

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(31808)

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Part	Category	Description
Microchip Technology VCC1-B2D-24M0000000	Crystals Oscillators Resonators	CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM
Microchip Technology DSC1003CI2-033.0000T	Crystals Oscillators Resonators	MEMS OSC
Microchip Technology SAMA7G54D2GT-I/4UB	Integrated Circuits (ICs)	1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L
Microchip Technology JANTXV1N3890R	Discrete Semiconductor Products	DIODE GEN PURP 100V 12A DO203AA
Microchip Technology MSMBJ5372BLTB	Circuit Protection	VOLTAGE REGULATOR
Microchip Technology MCP60711T-E/OT	Integrated Circuits (ICs)	OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS
Microchip Technology LE9531CMQCTObsolete	Integrated Circuits (ICs)	IC TELECOM INTERFACE 28QFN
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete	Integrated Circuits (ICs)	IC TRANSCEIVER
Microchip Technology PIC16F628-20E/SO	Integrated Circuits (ICs)	MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE
Microchip Technology VCC6-LCF-212M500000Obsolete	Crystals Oscillators Resonators	DIFFERENTIAL XO +3.3 VDC +/-5% L

Series	Category	# Parts	Status	Description

MSMLJ64ASurface Mount 3000 Watt Transient Voltage Suppressor	Transient Voltage Suppressors (TVS)	1	Active	The MSMLG(J)5.0A through MXLSMLG(J)170A series of high-reliability Transient Voltage Suppressors (TVSs) protect circuits from voltage spikes containing up to 3000 W (10/1000 µs model pulse. The SMLG gull-wing design in the DO-215AB package allows for visible solder connections. The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density. Selections include unidirectional and bidirectional as well as RoHS compliant versions. These are available with a variety of upscreening options for enhanced reliability. They protect against the secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching environments and induced by RF radiation. Since their response time is virtually instantaneous, they can also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
MSMLJ7.5-e3Surface Mount 3000 Watt Transient Voltage Suppressor	Transient Voltage Suppressors (TVS)	5	Active	The MSMLG(J)5.0A through MXLSMLG(J)170A series of high-reliability Transient Voltage Suppressors (TVSs) protect circuits from voltage spikes containing up to 3000 W (10/1000 µs model pulse. The SMLG gull-wing design in the DO-215AB package allows for visible solder connections. The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density. Selections include unidirectional and bidirectional as well as RoHS compliant versions. These are available with a variety of upscreening options for enhanced reliability. They protect against the secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching environments and induced by RF radiation. Since their response time is virtually instantaneous, they can also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
MSMLJ78-e3Surface Mount 3000 Watt Transient Voltage Suppressor	Circuit Protection	8	Active	The MSMLG(J)5.0A through MXLSMLG(J)170A series of high-reliability Transient Voltage Suppressors (TVSs) protect circuits from voltage spikes containing up to 3000 W (10/1000 µs model pulse. The SMLG gull-wing design in the DO-215AB package allows for visible solder connections. The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density. Selections include unidirectional and bidirectional as well as RoHS compliant versions. These are available with a variety of upscreening options for enhanced reliability. They protect against the secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching environments and induced by RF radiation. Since their response time is virtually instantaneous, they can also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
MSMLJ8.5-e3Surface Mount 3000 Watt Transient Voltage Suppressor	TVS Diodes	10	Active	The MSMLG(J)5.0A through MXLSMLG(J)170A series of high-reliability Transient Voltage Suppressors (TVSs) protect circuits from voltage spikes containing up to 3000 W (10/1000 µs model pulse. The SMLG gull-wing design in the DO-215AB package allows for visible solder connections. The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density. Selections include unidirectional and bidirectional as well as RoHS compliant versions. These are available with a variety of upscreening options for enhanced reliability. They protect against the secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching environments and induced by RF radiation. Since their response time is virtually instantaneous, they can also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
MSR2N2222AUBC-TransistorNPN Silicon Switching 50V, 0.8A	Bipolar (BJT)	1	Active	This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
MSR2N2369AUA-TransistorNPN Switching 15V to 20V, 0.1A	Single Bipolar Transistors	1	Active	This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
MSR2N2369AUB-TransistorNPN Switching 15V to 20V, 0.1A	Discrete Semiconductor Products	1	Active	This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
MSR2N2369AUBC-TransistorNPN Switching 15V to 20V, 0.1A	Discrete Semiconductor Products	1	Active	This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
MSR2N3637UB-TransistorPNP Silicon Amplifier -140V, -1A	Discrete Semiconductor Products	1	Active	This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).
MSR2N3700UB-TransistorMIL-PRF-19500/391	Discrete Semiconductor Products	1	Active	This specification covers the performance requirements for NPN, silicon, low-power 2N3019, 2N3057A and 2N3700 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/391. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eleven radiation levels are provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-205AA and TO-205AD (formerly TO-5 and TO-39), TO-206AB (formerlyTO-46), three terminal round metal can TO-206AA (formerly TO-18), and four terminal SMD package UB and UBC.